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Core Technologies

In order to achieve high-end performance with low SWaP and affordable products, SCD.USA is vertically integrated with the following in-house technologies and capabilities:

  • Large volume R&D and manufacturing infrastructure for diverse detector technologies based on various semiconductor materials: HgCdTe, InSb, InGaAs, InAsSb, InAs/GaSb T2SL, and VOx micro-bolometers
  • More than 33,000 ft² of clean rooms with automated FAB process and infrastructure.
  • Design and simulation of semiconductor devices including advanced Bandgap Engineering
  • Material simulation, growth, and characterization using Liquid Phase Epitaxy (LPE) and Molecular Beam Epitaxy (MBE) technologies
  • Micro-electronics semiconductor processing technologies and FIB based failure analysis
  • Analog and digital VLSI design based on advanced CMOS technologies. Unique ROIC solutions for signal processing and advanced imaging functionalities
  • Packaging design and integration for infrared detectors: Cooler, Dewar and Integrated optics in cryogenically cooled detectors. Metallic, Ceramic, PCB and Wafer Level Packaging (WLP) for uncooled and TEC operated detectors
  • Stray light analysis and Environmental conditions analysis and test
  • Electro-optical characterization from test device level up to fully integrated FPA and IDCA
  • Image processing algorithms implemented in low SWaP video engines



SCD.USA has gained worldwide recognition of its innovative and high-quality products; its revolutionary methods enable creative approaches to meeting the challenging requirements of space imaging

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