In order to achieve high-end performance with low SWaP and affordable products, SCD.USA is vertically integrated with the following in-house technologies and capabilities:
- Large volume R&D and manufacturing infrastructure for diverse detector technologies based on various semiconductor materials: HgCdTe, InSb, InGaAs, InAsSb, InAs/GaSb T2SL, and VOx micro-bolometers
- More than 33,000 ft² of clean rooms with automated FAB process and infrastructure.
- Design and simulation of semiconductor devices including advanced Bandgap Engineering
- Material simulation, growth, and characterization using Liquid Phase Epitaxy (LPE) and Molecular Beam Epitaxy (MBE) technologies
- Micro-electronics semiconductor processing technologies and FIB based failure analysis
- Analog and digital VLSI design based on advanced CMOS technologies. Unique ROIC solutions for signal processing and advanced imaging functionalities
- Packaging design and integration for infrared detectors: Cooler, Dewar and Integrated optics in cryogenically cooled detectors. Metallic, Ceramic, PCB and Wafer Level Packaging (WLP) for uncooled and TEC operated detectors
- Stray light analysis and Environmental conditions analysis and test
- Electro-optical characterization from test device level up to fully integrated FPA and IDCA
- Image processing algorithms implemented in low SWaP video engines
