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This is a multi-spectral, backside illuminated, radiation hardened sensor incorporating a single silicon die having 4 independent arrays corresponding to different spectral bands. Each array includes 2600 columns and up to 64 TDI levels.  As compared to competing satellite sensors, SCD’s CMOS-TDI sensor consumes extremely low power of up to 1.5 Watts for the whole detector, a significant advantage in satellite applications. Also, the sensor incorporates pixels with extremely large full well capacity of over 300000 electrons. This results in negligible noise levels. The detector is also characterized by high MTF at Nyquist frequency throughout the 400nm-1000nm region. The detector has also been proven to recover quickly from intense lighting, and withstand various stresses associated with launching and orbiting in space.

SCD.USA has gained worldwide recognition of its innovative and high-quality products; its revolutionary methods enable creative approaches to meeting the challenging requirements of space imaging

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